Kováč, U., Reid, D., Millar, C., Roy, G., Roy, S., & Asenov, A. Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET.
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Chicago Style (17th ed.) Citation
Kováč, Urban, Dave Reid, Campbell Millar, Gareth Roy, Scott Roy, and Asen Asenov. Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 Nm Channel Length MOSFET.
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MLA (9th ed.) Citation
Kováč, Urban, et al. Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 Nm Channel Length MOSFET.
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Warning: These citations may not always be 100% accurate.