Pudiš, D., & Kováč, J. (2000). Light-emitting devices based on ultra-thin GaAs layers in active MQW region = Emitujúce prvky na báze ultratenkých GaAs vrstiev v aktívnej MQW oblasti: V.odb. 26-13-9. Obhajoba 20.12.2000. STU v Bratislave FEI.
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Chicago Style (17th ed.) Citation
Pudiš, Dušan, and Jaroslav Kováč. Light-emitting Devices Based on Ultra-thin GaAs Layers in Active MQW Region = Emitujúce Prvky Na Báze Ultratenkých GaAs Vrstiev V Aktívnej MQW Oblasti: V.odb. 26-13-9. Obhajoba 20.12.2000. Bratislava: STU v Bratislave FEI, 2000.
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MLA (9th ed.) Citation
Pudiš, Dušan, and Jaroslav Kováč. Light-emitting Devices Based on Ultra-thin GaAs Layers in Active MQW Region = Emitujúce Prvky Na Báze Ultratenkých GaAs Vrstiev V Aktívnej MQW Oblasti: V.odb. 26-13-9. Obhajoba 20.12.2000. STU v Bratislave FEI, 2000.
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Warning: These citations may not always be 100% accurate.