Szobolovszký, R., & Kováč, J. (2019). Characterization of GaN and SiC Based Devices for Power Electronics: Dátum obhajoby 26.8.2019, č. ved. odboru 5-2-13. STU v Bratislave FEI.
Successfully copied to clipboard
Copying to clipboard failed
Chicago Style (17th ed.) Citation
Szobolovszký, Robert, and Jaroslav Kováč. Characterization of GaN and SiC Based Devices for Power Electronics: Dátum Obhajoby 26.8.2019, č. Ved. Odboru 5-2-13. Bratislava: STU v Bratislave FEI, 2019.
Successfully copied to clipboard
Copying to clipboard failed
MLA (9th ed.) Citation
Szobolovszký, Robert, and Jaroslav Kováč. Characterization of GaN and SiC Based Devices for Power Electronics: Dátum Obhajoby 26.8.2019, č. Ved. Odboru 5-2-13. STU v Bratislave FEI, 2019.
Successfully copied to clipboard
Copying to clipboard failed
Warning: These citations may not always be 100% accurate.