III-IV quantum system research
Saved in:
| Other Authors: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
London :
Institution of Electrical Engineers,
1995
|
| Series: | Materials and devices series
11 |
| Subjects: | |
| Tags: |
No Tags, Be the first to tag this record!
|
Similar Items: III-IV quantum system research
- Properties of Aluminium Galium Arsenide /
- Properties of gallium arsenide
- Light-emitting devices based on ultra-thin GaAs layers in active MQW region = Emitujúce prvky na báze ultratenkých GaAs vrstiev v aktívnej MQW oblasti : V.odb. 26-13-9. Obhajoba 20.12.2000
- Properties of lattice - matched and strained Indium Galium Arsenide /
- Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and INGaAsP /
- Properties of III - V quantum wells and superlattices