Elektrická charakterizácia polovodičových štruktúr na báze AIIIBV
Na minha lista:
| Autor principal: | |
|---|---|
| Outros Autores: | |
| Formato: | Manuscrito Livro |
| Idioma: | eslovaco |
| Publicado em: |
2015
|
| Assuntos: | |
| Acesso em linha: | http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=111661 |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|
MARC
| LEADER | 00000ntm a22000003a 4500 | ||
|---|---|---|---|
| 001 | stuzp48788 | ||
| 003 | SK-STU | ||
| 005 | 20160719153222.4 | ||
| 007 | ta | ||
| 008 | 150427s2015----xo-----f-mn---000-0-slo-d | ||
| 040 | |a STU |b slo | ||
| 041 | 0 | |a slo | |
| 100 | 1 | |a Solčiansky, Michal |u 033000 |4 aut |U FEI Fakulta elektrotechniky a informatiky |T FEI Ústav elektroniky a fotoniky |X 35377 |U E030 |Y 549 |7 A000035377 | |
| 242 | 0 | 1 | |a Electrical characterization of semiconductor structures based on AIIIBV |y eng |
| 245 | 1 | 0 | |a Elektrická charakterizácia polovodičových štruktúr na báze AIIIBV |
| 260 | |c 2015 | ||
| 300 | |a 48 s. |b CD-ROM | ||
| 650 | 4 | |a GaN |2 slo | |
| 650 | 4 | |a Schottkyho kontakt |2 slo | |
| 650 | 4 | |a HEMT |2 slo | |
| 650 | 4 | |a kapacitná metóda |2 slo | |
| 650 | 4 | |a prúdová metóda |2 slo | |
| 650 | 4 | |a Schottky contact |2 eng | |
| 650 | 4 | |a HEMT |2 eng | |
| 650 | 4 | |a capacitive method |2 eng | |
| 650 | 4 | |a current method |2 eng | |
| 650 | 4 | |a GaN |2 eng | |
| 700 | 1 | |a Benko, Peter |4 ths |X 5148 |7 A000005148 | |
| 856 | 4 | |u http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=111661 | |
| 996 | |b 284EP11134 |c E*DIPL- 11134 |l EE33 |s P |a 0 |w stuzp48788_0001 | ||
| SQL | |a stuzp48788 |b DDP |c SLO |d Elektrická charakterizácia polovodičových štruktúr na báze AIIIBV |e 35377 |f Solčiansky, Michal |g 033000 |h 5148 |i Benko, Peter |j 20150616 |k 83 |l 03 |m http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=111661 |n I-ME |o 5.2.13. elektronika | ||